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1/11 june 2003 stgp7nb60md - stgb7nb60md n-channel 7a - 600v to-220 / d 2 pak powermesh? igbt n high input impedance n low on-voltage drop (v cesat ) n off losses include tail current n low gate charge n high current capability n high frequency operation n co-packaged with turboswitch? antiparallel diode description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has de- signed an advanced family of igbts, the power- mesh? igbts, with outstanding perfomances. the suffix "m" identifies a family optimized to achieve very low switching switching times for high frequency applications (<20khz) applications n motor controls n smps and pfc and both hard switch and resonant topologies ordering information type v ces v ce(sat) (max) @25c i c @100c stgp7nb60md stgb7nb60md 600 v 600 v <1.9 v < 1.9v 7a 7a sales type marking package packaging stgp7nb60md gp7nb60md to-220 tube STGB7NB60MDT4 gb7nb60md d 2 pa k tape & reel to-220 1 2 3 d 2 pak 1 3 internal schematic diagram
stgp7nb60md - stgb7nb60md 2/11 absolute maximum ratings ( ) pulse width limited by safe operating area thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (1) symbol parameter value unit v ces collector-emitter voltage (v gs =0) 600 v v ge gate-emitter voltage 20 v i c collector current (continuous) at t c = 25c 14 a i c collector current (continuous) at t c = 100c 7a i cm ( ) collector current (pulsed) 56 a p tot total dissipation at t c = 25c 80 w derating factor 0.64 w/c t stg storage temperature C 55 to 150 c t j max. operating junction temperature 150 c rthj-case thermal resistance junction-case max 1.56 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w symbol parameter test conditions min. typ. max. unit v br(ces) collector-emitter breakdown voltage i c = 250 a, v ge =0 600 v i ces collector cut-off (v ge =0) v ce = max rating, t c =25c 50 a v ce = max rating, t c = 125 c 100 a i ges gate-emitter leakage current (v ce =0) v ge =20v,v ce = 0 100 na symbol parameter test conditions min. typ. max. unit v ge(th) gate threshold voltage v ce =v ge ,i c = 250a 35v v ce(sat) collector-emitter saturation voltage v ge =15v,i c =7a 1.5 1.9 v v ge =15v,i c =7a,tj=125c 1.2 v
3/11 stgp7nb60md - stgb7nb60md electrical characteristics (continued) dynamic switching on switching off collector-emitter diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by max. junction temperature. (**)losses include also the tail (jedec standardization) symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ce =25v,ic=7a 5s c ies input capacitance v ce =25v,f=1mhz,v ge =0 550 pf c oes output capacitance 85 pf c res reverse transfer capacitance 13 pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce =480v,i c =7a, v ge = 15v 37 4.2 13 50 nc nc nc i cl latching current v clamp = 480 v tj = 125c , r g =10 w 28 a symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v cc = 480 v, i c =7ar g =10 w , v ge =15v 13 6 ns ns (di/dt) on eon turn-on current slope turn-on switching losses v cc = 480 v, i c =7ar g =10 w v ge = 15 v,tj =125c 1000 50 a/s j symbol parameter test conditions min. typ. max. unit t c cross-over time v cc = 480 v, i c =7a, r g =10 w ,v ge =15v 340 ns t r (v off ) off voltage rise time 95 ns t d ( off ) delay time 155 ns t f fall time 240 ns e off (**) turn-off switching loss 455 m j e ts total switching loss 500 m j t c cross-over time v cc = 480 v, i c =7a, r g =10 w ,v ge =15v tj = 125 c 610 ns t r (v off ) off voltage rise time 215 ns t d ( off ) delay time 280 ns t f fall time 390 ns e off (**) turn-off switching loss 870 m j e ts total switching loss 920 m j symbol parameter test conditions min. typ. max. unit i f i fm forward current forward current pulsed 7 56 a a v f forward on-voltage i f = 3.5 a i f = 3.5 a, tj = 125 c 1.4 1.1 1.9 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f =7a,v r =40v, tj =125c, di/dt = 100 a/ m s 50 70 2.7 ns nc a
stgp7nb60md - stgb7nb60md 4/11 gate threshold vs temperature collector-emitter on voltage vs collector current normalized collector-emitter on voltage vs temp. transconductance transfer characteristics output characteristics
5/11 stgp7nb60md - stgb7nb60md total switching losses vs collector current total switching losses vs temperature total switching losses vs gate resistance gate charge vs gate-emitter voltage capacitance variations normalized breakdown voltage vs temperature
stgp7nb60md - stgb7nb60md 6/11 thermal impedance turn-off soa diode forward voltage
7/11 stgp7nb60md - stgb7nb60md fig. 2: test circuit for inductive load switching fig. 1: gate charge test circuit
stgp7nb60md - stgb7nb60md 8/11 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ?p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
9/11 stgp7nb60md - stgb7nb60md 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0o 4o d 2 pak mechanical data 3
stgp7nb60md - stgb7nb60md 10/11 tape and reel shipment (suffix t4)* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
11/11 stgp7nb60md - stgb7nb60md information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2003 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com

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